 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 6R1MBI75P-160 Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Diode Module Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current One cycle surge current I2t Operation junction temperature Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VRRM VRSM IO IFSM I2t Tj VCES VGES IC 50Hz/60Hz sine wave Tc=115C From rated load From rated load Condition Rating 1600 1760 75 600 1440 -40 to +125 1400 20 50 35 100 70 240 1400 +150 -40 to +125 3000 2.0 to 2.5 Unit V V A A A 2s C V V A A W V C C V N*m Converte arc m 1ms ICP on . te Collector power disspation 1 device PC ole esign Repetitive peak reverse voltage VRRM obs w d Operation junction temperature Tj be ne AC : 1 minuteed Tstg Storage junction temperature r l M5 screw Viso Isolation voltage du nd fo e Mounting screw torque sch me is c ct otherwiseom Electrical characteristics (Tj=25C unless re specified) odu Symbol Condition Item Min. Typ. Max. ot r N Fofward voltage VFM 1.35 sp Tj=25C, IFM=75A i Reverse current Th IRRM 15 Tj=150C, VR=VRRM DC Tc=25C Tc=75C Tc=25C Tc=75C Brake Co. h 0 20 7. Unit V mA mA nA V s Zero gate voltage Collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Brake Turn-off time Reverse current ICES IGES VCE(sat) ton tr toff tf IRRM VGE=0V. VCE=1400V VCE=0V. VGE=20V VGE=15V. IC=35A Vcc=800V Ic=35A VGE=15V RG=33ohm 2.4 0.35 0.25 0.45 0.08 1.0 200 2.8 1.2 0.6 1.0 0.3 1.0 mA Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Condition Converter Per total loss Per each device Brake IGBT (1 device) with thermal compound Min. Typ. Max. 0.16 0.96 0.70 0.08 Unit C/W Thermal Resistance(Case to fine) Rth(c-f) C/W Diode Module Forward Characteristics 250 6R1MBI75P-160 O utp ut C urre nt - T o ta l L o s s 80 max 70 typ 200 Forward Current IF (A ) 60 50 40 30 20 50 150deg 25deg Total Loss (W) 1.4 150 100 10 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 0 20 40 60 80 Forward Voltage O u t p u t C u rre n t Io (A ) O u tp u t C u r re n t - C a s e T e m p e ra tu r e 130 S u rg e C u rre n t 700 120 600 Case Temperature Tc(deg.C) 110 Peak Surge Current IFSM(A) 500 100 90 80 70 60 50 0 1 h arc m on . te ole esign obs w d e d b or ne le du nd f e T im e sch me s i om uct t rec Transient Thermal Impedance d [ B ra ke ] Tra nsie nt The rm a l Im p e d a nce pro No his T 400 300 200 100 20 40 60 80 0 20 7. 0 0 .0 1 0 .1 1 O u t p u t C u rre n t Io ( A ) 10 FW D Zth(j-c)(t) (deg.C/W) Zth(j-c)(deg.C/W) 0.1 1 IG BT 0.01 0.1 0.001 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 Tim e ( ) Tim e (s ec ) Diode Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 80 VGE= 20V 15V 12V 80 6R1MBI75P-160 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) VGE= 20V 15V 12V 60 60 Collector current : Ic [ A ] Collector current : Ic [ A ] 10V 40 10V 40 20 20 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 8V 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 80 Tj= 25C Tj= 125C 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 60 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 40 20 0 0 1 Collector - Emitter voltage : VCE [ V ] 10000 [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Th arc m on . te ole esign obs w d e d b or ne le du nd f e sch me is ct recom odu ot r N is p 4 Ic= 70A Ic= 35A 2 Ic= 17.5A 0 2 3 4 5 5 10 15 20 h 0 20 7. 25 Gate - Emitter voltage : VGE [ V ] 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] 600 15 1000 Coes 400 10 200 5 Cres 100 0 5 10 15 20 25 30 35 0 0 100 200 300 0 400 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] Cies Collector - Emitter voltage : VCE [ V ] 800 20 Diode Module Outline Drawings, mm 6R1MBI75P-160 90 78.5 4- O 6.1 C3 2- O5.5 11.75 7 14 7 0.5 21 7 + 23.5 16 - G E C 11 K 11.75 O 2.5 14 14 28.5 11 32 3 3.4 O 2.1 2 x t1 R1 arc 6R1MBi100P-160 6R1MBI75P-160 m on . te ole esign obs w d e d b or ne le du nd f e Equivalent Circuit Schematic sch me is ct recom odu ot r N is p h T 6 JAPAN K C G E 13 17 20.4 h 0 20 7. 1.5 |
Price & Availability of 6R1MBI75P-160
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |